IPB80N06S407ATMA2 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOST2 power transistor, 60 V, 80 A, PG-TO263-3, IPB80N06S407ATMA2
Brand: Infineon Technologies
SKU: 88S9124
Price: 1.74 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOST2 power transistor, 60 V, 80 A, PG-TO263-3, IPB80N06S407ATMA2

Order No.: 88S9124

EAN: 4099879035288

MPN:

IPB80N06S407ATMA2

SP001028672

Series: IPB

Image may differ

Key Specification:

Version N channel

max. Voltage 60 V

Max. current 80 A

drain-source on resistance RDS (on) max @VGS=10V 7.1 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.7374 € *

Available: 0 pcs.

Leadtime: 12 Weeks **

Add to Cart

Total Price:

1.74 € *

Price list

Quantity

Price per unit*

3 pcs.

1.7374 €

15 pcs.

1.5113 €

75 pcs.

1.3566 €

400 pcs.

1.2138 €

1000 pcs.

1.1067 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPB80N06S407ATMA2, Infineon Technologies

Features

N-channel
Enhancement mode
MSL1 up to 260°C peak reflow
Avalanche rated

Applications

Valves control
Solenoids control
Lighting
Single-ended motors

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	7.1 mΩ
	Gate Charge Qg @10V (nC)	4.3x10<sup>-8</sup> C
	Enclosure	PG-TO263-3
	max. Voltage	60 V
	Max. current	80 A
	max. operating temperature	175 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	79 W