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Artikelbeschreibung
Gesamt
Montage
Gehäuse
Ausführung
Anzahl der Kanäle
max. Spannung
min. Temperatur
Spannung
max. Temperatur
max. Strom
Verlustleistung VA (AC)
Sättigungsspannung
Einschaltwiderstand RDS (on) max @VGS=4,5V
Kollektorstrom
Isolationsspannung
Einschaltwiderstand RDS (on) max @VGS=10V
Ausgangsspannungsbereich
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![IPB80N04S404ATMA1 Infineon Technologies MOSFETs](/de/images/fbf/57S5268-1585680965875-1/95x95/infineon-technologies-n-kanal-optimost2-power-transistor-40-v-80-a-pg-to263-3-ipb80n04s404atma1.webp)
![IPB80N06S407ATMA2 Infineon Technologies MOSFETs](/de/images/fbf/57S5268-1585680965875-1/95x95/infineon-technologies-n-kanal-optimost2-power-transistor-60-v-80-a-pg-to263-3-ipb80n06s407atma2.webp)
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