BIDD05N60T | Bourns Electronics GmbH
IGBT, 600 V, 5 A, DPAK, Bourns Electronics GmbH BIDD05N60T
Order No.: 26S9092
EAN: 4099891587628
MPN:
BIDD05N60T
Unit Price (€ / pc.)
0.8211 € *
Available: 0 pcs.
Leadtime: 24 Weeks **
Insulated gate bipolar transistor (IGBT), BIDD05N60T, Bourns
The BIDD05N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.
Features
- Low Collector-Emitter Saturation Voltage (VCE(sat)
- Trench-gate field-stop technology
- Optimized for conduction
- RoHS compliant
Applications
- Switch-Mode Power Supplies (SMPS)
- Uninterruptible Power Sources (UPS)
- Power Factor Correction (PFC)
Technical specifications
| Version | single | |
| Enclosure | DPAK | |
| max. Voltage | 600 V | |
| Max. current | 5 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Saturation voltage | 2 V | |
| Switching loss b. switch off Eoff typ. | 0.07 J | |
| Switching loss at switch-on Eon typ. | 0.2 J | |
| Power dissipation | 82 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 2,500 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
