BIDW50N65T | Bourns Electronics GmbH
IGBT, 650 V, 50 A, TO-247, Bourns Electronics GmbH BIDW50N65T
Order No.: 26S9096
EAN: 4099891587666
MPN:
BIDW50N65T
Unit Price (€ / pc.)
3.6295 € *
Available: 0 pcs.
Leadtime: 20 Weeks **
Insulated gate bipolar transistor (IGBT), BIDW50N65T, Bourns
The BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).
Features
- Low Collector-Emitter Saturation Voltage (VCE(sat)
- Trench-gate field-stop technology
- Low switching loss
- RoHS compliant
Applications
- Switch-Mode Power Supplies (SMPS)
- Uninterruptible Power Sources (UPS)
- Power Factor Correction (PFC)
Technical specifications
| Ausführung | Einfach | |
| Gehäuse | TO-247 | |
| max. Spannung | 650 V | |
| max. Strom | 50 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Sättigungsspannung | 2.2 V | |
| Schaltverlust b. Ausschalten Eoff typ. | 1.1 J | |
| Schaltverlust b. Einschalten Eon typ. | 3 J | |
| Verlustleistung VA (AC) | 416 W |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 30 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
