BIDW50N65T | Bourns Electronics GmbH
IGBT, 650 V, 50 A, TO-247, Bourns Electronics GmbH BIDW50N65T
Order No.: 26S9096
EAN: 4099891587666
MPN:
BIDW50N65T
Unit Price (€ / pc.)
4.6767 € *
Available: 1,691 pcs.
Leadtime: 16 Weeks **
Total Price:
4.68 € *
Price list
Quantity
Price per unit*
1 pcs.
4.6767 €
30 pcs.
4.1055 €
120 pcs.
3.8913 €
270 pcs.
3.7485 €
1020 pcs.
3.5343 €
*incl. VAT plus shipping costs
**Subject to prior sale
Insulated gate bipolar transistor (IGBT), BIDW50N65T, Bourns
The BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).
Features
- Low Collector-Emitter Saturation Voltage (VCE(sat)
- Trench-gate field-stop technology
- Low switching loss
- RoHS compliant
Applications
- Switch-Mode Power Supplies (SMPS)
- Uninterruptible Power Sources (UPS)
- Power Factor Correction (PFC)
Technical specifications
| Version | single | |
| Enclosure | TO-247 | |
| max. Voltage | 650 V | |
| Max. current | 50 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Saturation voltage | 2.2 V | |
| Switching loss b. switch off Eoff typ. | 1.1 J | |
| Switching loss at switch-on Eon typ. | 3 J | |
| Power dissipation | 416 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 30 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
