BIDW50N65T | Bourns Electronics GmbH

IGBT, 650 V, 50 A, TO-247, Bourns Electronics GmbH BIDW50N65T

Order No.: 26S9096
EAN: 4099891587666
MPN:
BIDW50N65T
Bourns Electronics GmbH
BIDW50N65T Bourns Electronics GmbH IGBTs
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Unit Price (€ / pc.)
4.6767 € *
Available: 1,691 pcs.
Leadtime: 16 Weeks **
Total Price:
4.68 € *
Price list
Quantity
Price per unit*
1 pcs.
4.6767 €
30 pcs.
4.1055 €
120 pcs.
3.8913 €
270 pcs.
3.7485 €
1020 pcs.
3.5343 €
*incl. VAT plus shipping costs
**Subject to prior sale

Insulated gate bipolar transistor (IGBT), BIDW50N65T, Bourns

The BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

Features

  • Low Collector-Emitter Saturation Voltage (VCE(sat)
  • Trench-gate field-stop technology
  • Low switching loss
  • RoHS compliant

Applications

  • Switch-Mode Power Supplies (SMPS)
  • Uninterruptible Power Sources (UPS)
  • Power Factor Correction (PFC)
Technical specifications
Version single
Enclosure TO-247
max. Voltage 650 V
Max. current 50 A
max. operating temperature 150 °C
min. operating temperature -55 °C
Assembly THT
Saturation voltage 2.2 V
Switching loss b. switch off Eoff typ. 1.1 J
Switching loss at switch-on Eon typ. 3 J
Power dissipation 416 W
Logistics
Customs tariff number 85412900
Original Packaging Bar with 30 pieces
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes