MJE350 | CDIL
Bipolar junction transistor, PNP, 500 mA, 300 V, THT, TO-126, MJE350
Unit Price (€ / pc.)
0.2380 € *
Available: 65 pcs.
Available in 5 Days: 3,000 pcs.
Leadtime: 50 Weeks **
Power transistor, MJE350, CDIL
This epitaxial silicon power transistor is suitable for use in high voltage general purpose applications.
Technical specifications
Version | PNP | |
Enclosure | TO-126 | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 300 V | |
max.voltage between collector and emitter Vceo | 300 V | |
min. operating temperature | -65 °C | |
Assembly | THT | |
Rated current | 500 mA | |
Transit frequency fTmin | 4 MHz | |
Power dissipation | 1.25 W | |
Collector current | 500 mA | |
Max DC amplification | 240 mA | |
Min DC gain | 30 mA |
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Logistics
Country of origin | IN |
Customs tariff number | 85412900 |
Original Packaging | Bulk with 500 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |