2N3019-T | COMSET Semiconductors
Bipolar junction transistor, NPN, 1 A, 80 V, THT, TO-39, 2N3019-T
Unit Price (€ / pc.)
0.5974 € *
Available: 0 pcs.
Available in 5 Days: 1,000 pcs.
Leadtime: 10 Weeks **
Total Price:
0.60 € *
Price list
Quantity
Price per unit*
100 pcs.
0.5974 €
500 pcs.
0.5200 €
1000 pcs.
0.4724 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN transistor, 2N3019-T, COMSET
The 2N3019-T NPN transistor is mounted in TO-39 metal case. It is intended for high-current, high-frequency amplifier applications.
Features
- High gain and low saturation voltages
- Compliance to RoHS
Technical specifications
| Ausführung | NPN | |
| Gehäuse | TO-39 | |
| max. Temperatur | 200 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 140 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 80 V | |
| min. Temperatur | -65 °C | |
| Montage | THT | |
| Nennstrom | 1 A | |
| Sättigungsspannung | 200 mV | |
| Transitfrequenz fTmin | 100 MHz | |
| Verlustleistung VA (AC) | 0.8 W | |
| Kollektorstrom | 1 A | |
| Max Gleichstromverstärkung | 300 mA | |
| Min Gleichstromverstärkung | 100 mA |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
