2N5416-T | COMSET Semiconductors
Bipolar junction transistor, PNP, -200 mA, -300 V, THT, TO-39, 2N5416-T
Unit Price (€ / pc.)
0.6307 € *
Available: 85 pcs.
Leadtime: 6 Weeks **
PNP transistor, 2N5416-T, COMSET
The 2N5416-T is a PNP transistors mounted in TO-39 metal case. It is intended for use in high-voltage switching and linear amplifier applications.
Features
- Compliance to RoHS
Technical specifications
| Version | PNP | |
| Enclosure | TO-39 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | -350 V | |
| max.voltage between collector and emitter Vceo | -300 V | |
| min. operating temperature | -65 °C | |
| Assembly | THT | |
| Saturation voltage | -2.5 V | |
| Transit frequency fTmin | 15 MHz | |
| Power dissipation | 1 W | |
| Collector current | -200 mA | |
| Max DC amplification | 120 mA | |
| Min DC gain | 30 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bulk with 500 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
