BD646-T | COMSET Semiconductors
Bipolar junction transistor, PNP, -8 A, -60 V, THT, TO-220, BD646-T
Order No.: 14S5900
EAN: 4099879028280
MPN:
BD646-T
Unit Price (€ / pc.)
1.8207 € *
Available: 100 pcs.
Leadtime: 4 Weeks **
Total Price:
1.82 € *
Price list
Quantity
Price per unit*
1 pcs.
1.8207 €
10 pcs.
1.2971 €
100 pcs.
1.1067 €
500 pcs.
0.9639 €
1000 pcs.
0.8806 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BD646-T, COMSET
The BD646-T is a NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe.
Features
- Compliance to RoHS
Technical specifications
| Ausführung | PNP | |
| Frequenz | 10 MHz | |
| Gehäuse | TO-220 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | -60 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | -60 V | |
| min. Temperatur | -65 °C | |
| Montage | THT | |
| Nennstrom | 8 A | |
| Sättigungsspannung | -2.5 V | |
| Verlustleistung VA (AC) | 62.5 W | |
| Kollektorstrom | -8 A |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
