BD647 | COMSET Semiconductors
Bipolar junction transistor, NPN, 8 A, 80 V, THT, TO-220, BD647
Order No.: 14S5950
EAN: 4099879028297
MPN:
BD647
Unit Price (€ / pc.)
1.0591 € *
Available: 0 pcs.
Leadtime: 3 Weeks **
NPN power transistor, BD647, COMSET
The BD647 is a NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. It is intended for output stages in audio equipment, general amplifiers, and analogue switching application.
Features
- Compliance to RoHS
Technical specifications
Ausführung | NPN | |
Frequenz | 10 MHz | |
Gehäuse | TO-220 | |
max. Temperatur | 150 °C | |
max.Spannung zwischen Kollektor und Basis Vcbo | 100 V | |
max.Spannung zwischen Kollektor und Emitter Vceo | 80 V | |
min. Temperatur | -65 °C | |
Montage | THT | |
Nennstrom | 8 A | |
Sättigungsspannung | 2.5 V | |
Verlustleistung VA (AC) | 62.5 W | |
Kollektorstrom | 8 A |
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Logistics
Ursprungsland | CN |
Zolltarifnummer | 85412900 |
Originalverpackung | Stange mit 50 Stück |
Compliance
RoHS konform | Yes |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |