BD648 | COMSET Semiconductors
Bipolar junction transistor, PNP, -8 A, -80 V, THT, TO-220, BD648
Order No.: 14S6000
EAN: 4099879028303
MPN:
BD648
Unit Price (€ / pc.)
2.6061 € *
Available: 239 pcs.
Leadtime: On Request **
Total Price:
2.61 € *
Price list
Quantity
Price per unit*
1 pcs.
2.6061 €
10 pcs.
1.6303 €
50 pcs.
1.4399 €
250 pcs.
1.2376 €
1000 pcs.
1.0829 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BD648, COMSET
The BD648 is a NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe.
Features
- Compliance to RoHS
Technical specifications
Ausführung | PNP | |
Frequenz | 10 MHz | |
Gehäuse | TO-220 | |
max. Temperatur | 150 °C | |
max.Spannung zwischen Kollektor und Basis Vcbo | -80 V | |
max.Spannung zwischen Kollektor und Emitter Vceo | -80 V | |
min. Temperatur | -65 °C | |
Montage | THT | |
Nennstrom | 8 A | |
Sättigungsspannung | -2.5 V | |
Verlustleistung VA (AC) | 62.5 W | |
Kollektorstrom | -8 A |
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Logistics
Ursprungsland | IN |
Zolltarifnummer | 85412900 |
Originalverpackung | Stange mit 50 Stück |
Compliance
RoHS konform | Yes |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |