BD649-T | COMSET Semiconductors
Bipolar junction transistor, NPN, 8 A, 100 V, THT, TO-220, BD649-T
Order No.: 14S6050
EAN: 4099879028310
MPN:
BD649-T
Unit Price (€ / pc.)
1.1900 € *
Available: 17 pcs.
Next delivery: 50 pcs. on 2025-03-04
Leadtime: 5 Weeks **
Total Price:
1.19 € *
Price list
Quantity
Price per unit*
1 pcs.
1.1900 €
10 pcs.
0.8568 €
100 pcs.
0.7378 €
500 pcs.
0.6426 €
1000 pcs.
0.5712 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BD649-T, COMSET
The BD649-T is a NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. It is intended for output stages in audio equipment, general amplifiers, and analogue switching application.
Features
- Compliance to RoHS
Technical specifications
| Ausführung | NPN | |
| Frequenz | 10 MHz | |
| Gehäuse | TO-220 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 120 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 100 V | |
| min. Temperatur | -65 °C | |
| Montage | THT | |
| Nennstrom | 8 A | |
| Sättigungsspannung | 2.5 V | |
| Verlustleistung VA (AC) | 62.5 W | |
| Kollektorstrom | 8 A |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
