BD651-T | COMSET Semiconductors
Bipolar junction transistor, NPN, 8 A, 120 V, THT, TO-220, BD651-T
Order No.: 14S6150
EAN: 4099879028341
MPN:
BD651-T
Unit Price (€ / pc.)
0.9282 € *
Available: 0 pcs.
Leadtime: On Request **
NPN power transistor, BD651-T, COMSET
The BD651-T is a NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. It is intended for output stages in audio equipment, general amplifiers, and analogue switching application.
Features
- Compliance to RoHS
Technical specifications
| Ausführung | NPN | |
| Frequenz | 10 MHz | |
| Gehäuse | TO-220 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 140 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 120 V | |
| min. Temperatur | -65 °C | |
| Montage | THT | |
| Nennstrom | 8 A | |
| Sättigungsspannung | 2.5 V | |
| Verlustleistung VA (AC) | 62.5 W | |
| Kollektorstrom | 8 A |
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Logistics
| Ursprungsland | IN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
