BDV65C | COMSET Semiconductors
Bipolar junction transistor, NPN, 12 A, 120 V, THT, TO-3P, BDV65C
Order No.: 15S5010
EAN: 4099879028525
MPN:
BDV65C
Unit Price (€ / pc.)
4.5220 € *
Available: 32 pcs.
Leadtime: 4 Weeks **
Total Price:
4.52 € *
Price list
Quantity
Price per unit*
1 pcs.
4.5220 €
30 pcs.
3.9746 €
120 pcs.
3.7604 €
270 pcs.
3.6295 €
1020 pcs.
3.4272 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BDV65C, COMSET
The BDV65C is a silicon epitaxial base transistor mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.
Features
- Compliance to RoHS
Technical specifications
| Ausführung | NPN | |
| Gehäuse | TO-3P | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 120 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 120 V | |
| min. Temperatur | -65 °C | |
| Montage | THT | |
| Nennstrom | 12 A | |
| Sättigungsspannung | 2 V | |
| Verlustleistung VA (AC) | 125 W | |
| Kollektorstrom | 12 A | |
| Min Gleichstromverstärkung | 1000 mA |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 30 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
