BDV67B | COMSET Semiconductors

Bipolar junction transistor, NPN, 16 A, 100 V, THT, TO-3P, BDV67B

Order No.: 15S5018
EAN: 4099879028532
MPN:
BDV67B
COMSET Semiconductors
BDV67B COMSET Semiconductors Bipolar Transistors
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Unit Price (€ / pc.)
8.7108 € *
Available: 20 pcs.
Leadtime: On Request **
Total Price:
8.71 € *
Price list
Quantity
Price per unit*
1 pcs.
8.7108 €
10 pcs.
6.2237 €
25 pcs.
5.3193 €
50 pcs.
4.6291 €
100 pcs.
4.2126 €
*incl. VAT plus shipping costs
**Subject to prior sale

NPN power transistor, BDV67B, COMSET

This is a silicon epitaxial base transistors mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.

Features

  • Compliance to RoHS
Technical specifications
Version NPN
Enclosure TO-3P
max. operating temperature 150 °C
max.voltage between collector and base Vcbo 120 V
max.voltage between collector and emitter Vceo 100 V
min. operating temperature -65 °C
Assembly THT
Rated current 16 A
Saturation voltage 2 V
Power dissipation 200 W
Collector current 16 A
Min DC gain 1000 mA
Logistics
Country of origin MY
Customs tariff number 85412900
Original Packaging Bar with 25 pieces
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes