BDV67B | COMSET Semiconductors

Name: Bipolar junction transistor, NPN, 16 A, 100 V, THT, TO-3P, BDV67B
Brand: COMSET Semiconductors
SKU: 15S5018
Price: 8.71 EUR
Availability: OutOfStock

Bipolar junction transistor, NPN, 16 A, 100 V, THT, TO-3P, BDV67B

Order No.: 15S5018

EAN: 4099879028532

MPN:

BDV67B

Image may differ

Key Specification:

Montage THT

Gehäuse TO-3P

Ausführung NPN

Sättigungsspannung 2 V

Kollektorstrom 16 A

Show 2 variants

Download Datasheet Technical specifications

Unit Price (€ / pc.)

8.7108 € *

Available: 0 pcs.

Leadtime: 3 Weeks **

Total Price:

8.71 € *

Price list

Quantity

Price per unit*

1 pcs.

8.7108 €

10 pcs.

6.2237 €

25 pcs.

5.3193 €

50 pcs.

4.6291 €

100 pcs.

4.2126 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

NPN power transistor, BDV67B, COMSET

This is a silicon epitaxial base transistors mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.

Features

Compliance to RoHS

Technical specifications

	Ausführung	NPN
	Gehäuse	TO-3P
	max. Temperatur	150 °C
	max.Spannung zwischen Kollektor und Basis Vcbo	120 V
	max.Spannung zwischen Kollektor und Emitter Vceo	100 V
	min. Temperatur	-65 °C
	Montage	THT
	Nennstrom	16 A
	Sättigungsspannung	2 V
	Verlustleistung VA (AC)	200 W
	Kollektorstrom	16 A
	Min Gleichstromverstärkung	1000 mA