BDV67B | COMSET Semiconductors
Bipolar junction transistor, NPN, 16 A, 100 V, THT, TO-3P, BDV67B
Order No.: 15S5018
EAN: 4099879028532
MPN:
BDV67B
Unit Price (€ / pc.)
8.7108 € *
Available: 0 pcs.
Leadtime: 3 Weeks **
Total Price:
8.71 € *
Price list
Quantity
Price per unit*
1 pcs.
8.7108 €
10 pcs.
6.2237 €
25 pcs.
5.3193 €
50 pcs.
4.6291 €
100 pcs.
4.2126 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BDV67B, COMSET
This is a silicon epitaxial base transistors mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.
Features
- Compliance to RoHS
Technical specifications
Ausführung | NPN | |
Gehäuse | TO-3P | |
max. Temperatur | 150 °C | |
max.Spannung zwischen Kollektor und Basis Vcbo | 120 V | |
max.Spannung zwischen Kollektor und Emitter Vceo | 100 V | |
min. Temperatur | -65 °C | |
Montage | THT | |
Nennstrom | 16 A | |
Sättigungsspannung | 2 V | |
Verlustleistung VA (AC) | 200 W | |
Kollektorstrom | 16 A | |
Min Gleichstromverstärkung | 1000 mA |
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Logistics
Ursprungsland | MY |
Zolltarifnummer | 85412900 |
Originalverpackung | Stange mit 25 Stück |
Compliance
RoHS konform | Yes |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |