BDV67B | COMSET Semiconductors

Name: Bipolar junction transistor, NPN, 16 A, 100 V, THT, TO-3P, BDV67B
Brand: COMSET Semiconductors
SKU: 15S5018
Price: 8.71 EUR
Availability: InStock

Bipolar junction transistor, NPN, 16 A, 100 V, THT, TO-3P, BDV67B

Order No.: 15S5018

EAN: 4099879028532

MPN:

BDV67B

Image may differ

Key Specification:

Assembly THT

Enclosure TO-3P

Version NPN

Saturation voltage 2 V

Collector current 16 A

Show 2 variants

Download Datasheet Technical specifications

Unit Price (€ / pc.)

8.7108 € *

Available: 20 pcs.

Leadtime: 6 Weeks **

Total Price:

8.71 € *

Price list

Quantity

Price per unit*

1 pcs.

8.7108 €

10 pcs.

6.2237 €

25 pcs.

5.3193 €

50 pcs.

4.6291 €

100 pcs.

4.2126 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

NPN power transistor, BDV67B, COMSET

This is a silicon epitaxial base transistors mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.

Features

Compliance to RoHS

Technical specifications

	Version	NPN
	Enclosure	TO-3P
	max. operating temperature	150 °C
	max.voltage between collector and base Vcbo	120 V
	max.voltage between collector and emitter Vceo	100 V
	min. operating temperature	-65 °C
	Assembly	THT
	Rated current	16 A
	Saturation voltage	2 V
	Power dissipation	200 W
	Collector current	16 A
	Min DC gain	1000 mA