BDV67C-T | COMSET Semiconductors
Bipolar junction transistor, NPN, 16 A, 120 V, THT, TO-3PN, BDV67C-T
Order No.: 15S5020
EAN: 4099879028549
MPN:
BDV67C-T
Unit Price (€ / pc.)
4.9028 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
4.90 € *
Price list
Quantity
Price per unit*
1 pcs.
4.9028 €
10 pcs.
4.3197 €
100 pcs.
3.7842 €
250 pcs.
3.6414 €
1000 pcs.
3.4034 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BDV67C-T, COMSET
This is a silicon epitaxial base transistors mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.
Features
- Compliance to RoHS
Technical specifications
Version | NPN | |
Enclosure | TO-3PN | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 140 V | |
max.voltage between collector and emitter Vceo | 120 V | |
min. operating temperature | -65 °C | |
Assembly | THT | |
Saturation voltage | 2 V | |
Power dissipation | 200 W | |
Collector current | 16 A | |
Min DC gain | 1000 mA |
Download
Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |