FM25V10-GTR | Cypress
FRAM 1 Mbit, SOIC-8, FM25V10-GTR
Memory ICs, FM25V10-GTR, Cypress
The FM25V10 is a 1-Mbitt nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM 100 trillion read/write cycles or 100 million times more write cycles than EEPROM. The device uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology and is offered with a unique serial number that is read-only and can be used to identify a board or system.
Features
- High-endurance 100 trillion read/writes
- Very fast serial peripheral interface (SPI)
- Sophisticated write protection scheme
- Device ID and Serial Number
- Low power consumption
Gehäuse | SOIC-8 | |
max. Temperatur | 85 °C | |
min. Temperatur | -40 °C | |
Montage | SMD | |
Spannung | 2-3,6 V | |
Speichergröße | 1 Mbit | |
Taktfrequenz | 40 MHz | |
Technologie | FRAM |
Zolltarifnummer | 85423290 |
MSL | MSL 3 |
Originalverpackung | Rolle mit 2.500 Stück |
RoHS konform | Yes |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |