ZTX849 | Diodes
Bipolar junction transistor, NPN, 5 A, 30 V, THT, e-line, ZTX849
Unit Price (€ / pc.)
0.6545 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, ZTX849, DIODES
NPN silicon planar medium power high current transistor, E-Line.
Technical specifications
Version | NPN | |
Enclosure | e-line | |
max. operating temperature | 200 °C | |
max.voltage between collector and base Vcbo | 80 V | |
max.voltage between collector and emitter Vceo | 30 V | |
min. operating temperature | -55 °C | |
Assembly | THT | |
Rated current | 5 A | |
Saturation voltage | 200 mV | |
Transit frequency fTmin | 100 MHz | |
Power dissipation | 1.2 W | |
Collector current | 5 A | |
Max DC amplification | 300 mA | |
Min DC gain | 100 mA |
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Logistics
Country of origin | QU |
Customs tariff number | 85412900 |
Original Packaging | Bulk with 4,000 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |