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ZTX853 | Diodes

Bipolar junction transistor, NPN, 4 A, 100 V, THT, e-line, ZTX853

Order No.: 33S1246
EAN: 4099879031488
MPN:
ZTX853
Series: ZTX
Diodes
ZTX853 Diodes Bipolar Transistors
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Key Specification:
Assembly THT
Enclosure e-line
Version NPN
Saturation voltage 200 mV
Collector current 4 A
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Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.7259 € *
Available: 0 pcs.
Leadtime: On Request **
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Total Price:
0.73 € *
*incl. VAT plus shipping costs
**Subject to prior sale
4000 pcs.
0.7259 €
Description
Technical specifications
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NPN transistor, ZTX853, DIODES

NPN silicon planar medium power high current transistor, E-Line.
Technical specifications
Version NPN
Enclosure e-line
max. operating temperature 200 °C
max.voltage between collector and base Vcbo 200 V
max.voltage between collector and emitter Vceo 100 V
min. operating temperature -55 °C
Assembly THT
Saturation voltage 200 mV
Transit frequency fTmin 130 MHz
Power dissipation 1.58 W
Collector current 4 A
Max DC amplification 300 mA
Min DC gain 100 mA
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Logistics
Customs tariff number 85412900
Original Packaging Bulk with 4,000 pieces
Compliance
RoHS conform Yes
SVHC free Yes