DMN65D8L-7 | Diodes
Diodes N channel MOSFET, 60 V, 310 mA, TO-236, DMN65D8L-7
Order No.: 33S2414
EAN: 4099879034441
MPN:
DMN65D8L-7
Unit Price (€ / pc.)
0.0274 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, DMN65D8L-7, Diodes
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
Technical specifications
Ausführung | N-Kanal | |
Einschaltwiderstand RDS (on) max @VGS=10V | 3 Ω | |
Gate Charge Qg @10V (nC) | 8.7x10<sup>-10</sup> C | |
Gehäuse | TO-236 | |
max. Spannung | 60 V | |
max. Strom | 310 mA | |
max. Temperatur | 150 °C | |
min. Temperatur | -55 °C | |
Montage | SMD |
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Logistics
Ursprungsland | CN |
Zolltarifnummer | 85412900 |
Originalverpackung | Rolle mit 3.000 Stück |
Compliance
RoHS konform | Yes |
SVHC frei | Yes |