ZXMN10A07ZTA | Diodes
Diodes N channel MOSFET, 100 V, 1 A, SOT-89, ZXMN10A07ZTA
Unit Price (€ / pc.)
0.3451 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, ZXMN10A07ZTA, Diodes
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Low on-resistance
- Low threshold
- Fast switching speed
- Low gate drive
Applications
- DC-DC Converters
- Power management functions
- Motor control
- Disconnect switches
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 700 mΩ | |
Gate Charge Qg @10V (nC) | 2.9x10<sup>-9</sup> C | |
Enclosure | SOT-89 | |
max. Voltage | 100 V | |
Max. current | 1 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD |
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Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Reel with 1,000 pieces |
Compliance
RoHS conform | Yes |
SVHC free | Yes |