ZXMN3F30FHTA | Diodes
Diodes N channel MOSFET, 30 V, 4.6 A, TO-236, ZXMN3F30FHTA
Unit Price (€ / pc.)
0.2237 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, ZXMN3F30FHTA, Diodes
This new generation MOSFET features low onresistance achievable with 4.5V gate drive.
Features
- Low On-Resistance
- 4.5V gate drive capability
Technical specifications
Ausführung | N-Kanal | |
Einschaltwiderstand RDS (on) max @VGS=10V | 47 mΩ | |
Gate Charge Qg @10V (nC) | 7.7x10<sup>-9</sup> C | |
Gehäuse | TO-236 | |
max. Spannung | 30 V | |
max. Strom | 4.6 A | |
max. Temperatur | 150 °C | |
min. Temperatur | -55 °C | |
Montage | SMD |
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Logistics
Ursprungsland | CN |
Zolltarifnummer | 85412900 |
Originalverpackung | Rolle mit 3.000 Stück |
Compliance
RoHS konform | Yes |
SVHC frei | Yes |