BC848BE6327 | Infineon Technologies
Bipolar junction transistor, NPN, 100 mA, 30 V, SMD, SOT-23, BC848BE6327
Unit Price (€ / pc.)
0.0309 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BC848BE6327, Infineon Technologies
Features
- High current gain
- Low collector-emitter saturation voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For AF input stages and driver applications
Technical specifications
Version | NPN | |
Enclosure | SOT-23 | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 30 V | |
max.voltage between collector and emitter Vceo | 30 V | |
min. operating temperature | -65 °C | |
Assembly | SMD | |
Saturation voltage | 250 mV | |
Transit frequency fTmin | 250 MHz | |
Power dissipation | 0.33 W | |
Collector current | 100 mA | |
Max DC amplification | 450 mA | |
Min DC gain | 200 mA |
Download
Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Reel with 3,000 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |