BCR08PN | Infineon Technologies
Bipolar junction transistor, NPN/PNP, 100 mA, 50 V, SMD, SOT-363, BCR08PN
Unit Price (€ / pc.)
0.0666 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BCR08PN, Infineon Technologies
The BCR08PN is a transistor array that improves mounting density, allowing more transistors to occupy less space.
Features
- Low current gain
- Two (galvanic) internal isolated NPN/PNP
- Built in bias resistor NPN and PNP
- Pb-free and RoHs-compliant
Applications
- Switching circuit
- Inverters
- Interface circuit
- Driver circuit
Technical specifications
| Ausführung | NPN/PNP | |
| Gehäuse | SOT-363 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 50 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 50 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Nennstrom | 100 mA | |
| Sättigungsspannung | 300 mV | |
| Transitfrequenz fTmin | 170 MHz | |
| Verlustleistung VA (AC) | 0.25 W | |
| Kollektorstrom | 100 mA | |
| Min Gleichstromverstärkung | 70 mA |
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Logistics
| Ursprungsland | MY |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
