BCR108E6327 | Infineon Technologies
Bipolar junction transistor, NPN, 100 mA, 50 V, SMD, SOT-23, BCR108E6327
Abgekündigt
Unit Price (€ / pc.)
0.1880 € *
Available: 2,710 pcs.
Leadtime: On Request **
Total Price:
1.88 € *
Price list
Quantity
Price per unit*
10 pcs.
0.1880 €
100 pcs.
0.1392 €
500 pcs.
0.1107 €
3000 pcs.
0.0928 €
6000 pcs.
0.0821 €
*incl. VAT plus shipping costs
**Subject to prior sale
Bipolar transistor, BCR108E6327, Infineon Technologies
Features
- Built in bias resistor
- Low current gain
- High collector-emitter breakdown voltage
- Pb-free and RoHs-compliant
Applications
- Switching circuit
- Inverters
- Interface circuit
- Driver circuit
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-23 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 50 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 50 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Nennstrom | 100 mA | |
| Sättigungsspannung | 300 mV | |
| Transitfrequenz fTmin | 170 MHz | |
| Verlustleistung VA (AC) | 0.2 W | |
| Kollektorstrom | 100 mA | |
| Min Gleichstromverstärkung | 70 mA |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
