BCR135E6327 | Infineon Technologies

Bipolar junction transistor, NPN, 100 mA, 50 V, SMD, SOT-23, BCR135E6327

Order No.: 12S6606
EAN: 4099879027559
MPN:
BCR135E6327
Series: BCR
Infineon Technologies
BCR135E6327 Infineon Technologies Bipolar Transistors
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Unit Price (€ / pc.)
0.0904 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
0.09 € *
*incl. VAT plus shipping costs
**Subject to prior sale
3000 pcs.
0.0904 €

Bipolar transistor, BCR135E6327, Infineon Technologies

Features

  • Built in bias resistor
  • Low current gain
  • High collector-emitter breakdown voltage
  • Pb-free and RoHs-compliant

Applications

  • Switching circuit
  • Inverters
  • Interface circuit
  • Driver circuit
Technical specifications
Version NPN
Enclosure SOT-23
max. operating temperature 150 °C
max.voltage between collector and base Vcbo 50 V
max.voltage between collector and emitter Vceo 50 V
min. operating temperature -65 °C
Assembly SMD
Rated current 100 mA
Saturation voltage 300 mV
Transit frequency fTmin 150 MHz
Power dissipation 0.2 W
Collector current 100 mA
Min DC gain 70 mA
Logistics
Country of origin CN
Customs tariff number 85412900
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes