BCR562E6327 | Infineon Technologies

Bipolar junction transistor, PNP, 500 mA, 50 V, SMD, SOT-23, BCR562E6327

Order No.: 12S6641
EAN: 4099879027634
MPN:
BCR562E6327
Series: BCR
Infineon Technologies
BCR562E6327 Infineon Technologies Bipolar Transistors
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Discontinued

Unit Price (€ / pc.)
0.1821 € *
Available: 8 pcs.
Leadtime: On Request **
Total Price:
0.18 € *
Price list
Quantity
Price per unit*
1 pcs.
0.1821 €
100 pcs.
0.1416 €
500 pcs.
0.1166 €
1000 pcs.
0.1035 €
2500 pcs.
0.0964 €
*incl. VAT plus shipping costs
**Subject to prior sale

Bipolar transistor, BCR562E6327, Infineon Technologies

Features

  • Built in bias resistor
  • Low current gain
  • High collector-emitter breakdown voltage
  • Pb-free and RoHs-compliant

Applications

  • Switching circuit
  • Inverters
  • Interface circuit
  • Driver circuit
Technical specifications
Version PNP
Enclosure SOT-23
max. operating temperature 150 °C
max.voltage between collector and base Vcbo 50 V
max.voltage between collector and emitter Vceo 50 V
min. operating temperature -65 °C
Assembly SMD
Rated current 500 mA
Saturation voltage 300 mV
Transit frequency fTmin 150 MHz
Power dissipation 0.33 W
Collector current 500 mA
Min DC gain 60 mA
Logistics
Country of origin CN
Customs tariff number 85412900
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes