BCX54-16E6327 | Infineon Technologies
Bipolar junction transistor, NPN, 1 A, 45 V, SMD, SOT-89, BCX54-16E6327
Discontinued
Unit Price (€ / pc.)
0.3332 € *
Available: 393 pcs.
Leadtime: On Request **
Total Price:
1.67 € *
Price list
Quantity
Price per unit*
5 pcs.
0.3332 €
50 pcs.
0.2654 €
100 pcs.
0.2178 €
500 pcs.
0.1940 €
1000 pcs.
0.1773 €
*incl. VAT plus shipping costs
**Subject to prior sale
Bipolar transistor, BCX54-16E6327, Infineon Technologies
The BCX54-16E6327 is a NPN silicon AF transistor that is used for driver and output stages.
Features
- High collector current
- High current gain
- Low collector-emitter saturation voltage
- Pb-free and RoHs-compliant
Applications
- For AF driver and output stages
Technical specifications
Version | NPN | |
Enclosure | SOT-89 | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 45 V | |
max.voltage between collector and emitter Vceo | 45 V | |
min. operating temperature | -65 °C | |
Assembly | SMD | |
Rated current | 1 A | |
Saturation voltage | 500 mV | |
Transit frequency fTmin | 100 MHz | |
Power dissipation | 2 W | |
Collector current | 1 A | |
Max DC amplification | 250 mA | |
Min DC gain | 100 mA |
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Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |