BCX55H6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 1 A, 60 V, SMD, SOT-89, BCX55H6327XTSA1
Discontinued
Unit Price (€ / pc.)
0.4522 € *
Available: 55 pcs.
Leadtime: On Request **
Total Price:
2.26 € *
Price list
Quantity
Price per unit*
5 pcs.
0.4522 €
50 pcs.
0.3451 €
100 pcs.
0.2880 €
500 pcs.
0.2559 €
1000 pcs.
0.2356 €
*incl. VAT plus shipping costs
**Subject to prior sale
Bipolar transistor, BCX55H6327XTSA1, Infineon Technologies
The BCX55H6327XTSA1 is a NPN silicon AF transistor that is used for driver and output stages.
Features
- High collector current
- High current gain
- Low collector-emitter saturation voltage
- Pb-free and RoHs-compliant
Applications
- For AF driver and output stages
Technical specifications
| Version | NPN | |
| Enclosure | SOT-89 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 60 V | |
| max.voltage between collector and emitter Vceo | 60 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Rated current | 1 A | |
| Saturation voltage | 500 mV | |
| Transit frequency fTmin | 100 MHz | |
| Power dissipation | 2 W | |
| Collector current | 1 A | |
| Max DC amplification | 250 mA | |
| Min DC gain | 40 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
