BFP193E6327 | Infineon Technologies
Bipolar junction transistor, NPN, 80 mA, 12 V, SMD, SOT-143, BFP193E6327
Unit Price (€ / pc.)
0.2225 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP193E6327, Infineon Technologies
The BFP193E6327is a low noise silicon bipolar RF transistor that is used for high-gain amplifiers.
Features
- Low current gain
- Low collector-emitter breakdown voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For low noise, high-gain amplifiers up to 2 GHz
- For linear broadband amplifiers
Technical specifications
| Version | NPN | |
| Enclosure | SOT-143 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 20 V | |
| max.voltage between collector and emitter Vceo | 12 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Transit frequency fTmin | 6 GHz | |
| Power dissipation | 0.58 W | |
| Collector current | 80 mA | |
| Max DC amplification | 140 mA | |
| Min DC gain | 70 mA |
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Logistics
| Country of origin | MY |
| Customs tariff number | 85412900 |
Compliance
| RoHS conform | No |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
