BFP193E6327 | Infineon Technologies

Name: Bipolar junction transistor, NPN, 80 mA, 12 V, SMD, SOT-143, BFP193E6327
Brand: Infineon Technologies
SKU: 16S6896
Price: 0.22 EUR
Availability: OutOfStock

Bipolar junction transistor, NPN, 80 mA, 12 V, SMD, SOT-143, BFP193E6327

Order No.: 16S6896

EAN: 4099879028983

MPN:

BFP193E6327

Series: BFP193

Image may differ

Key Specification:

Montage SMD

Gehäuse SOT-143

Ausführung NPN

Kollektorstrom 80 mA

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.2225 € *

Available: 0 pcs.

Leadtime: On Request **

Total Price:

667.59 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

Bipolar transistor, BFP193E6327, Infineon Technologies

The BFP193E6327is a low noise silicon bipolar RF transistor that is used for high-gain amplifiers.

Features

Low current gain
Low collector-emitter breakdown voltage
Low noise
Pb-free and RoHs-compliant

Applications

For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers

Technical specifications

	Ausführung	NPN
	Gehäuse	SOT-143
	max. Temperatur	150 °C
	max.Spannung zwischen Kollektor und Basis Vcbo	20 V
	max.Spannung zwischen Kollektor und Emitter Vceo	12 V
	min. Temperatur	-55 °C
	Montage	SMD
	Transitfrequenz fTmin	6 GHz
	Verlustleistung VA (AC)	0.58 W
	Kollektorstrom	80 mA
	Max Gleichstromverstärkung	140 mA
	Min Gleichstromverstärkung	70 mA