BFP193E6327 | Infineon Technologies

Bipolar junction transistor, NPN, 80 mA, 12 V, SMD, SOT-143, BFP193E6327

Order No.: 16S6896
EAN: 4099879028983
MPN:
BFP193E6327
Series: BFP193
BFP193E6327 Infineon Technologies Bipolar Transistors
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Unit Price (€ / pc.)
0.2225 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
667.59 € *
*incl. VAT plus shipping costs
**Subject to prior sale
3000 pcs.
0.2225 €

Bipolar transistor, BFP193E6327, Infineon Technologies

The BFP193E6327is a low noise silicon bipolar RF transistor that is used for high-gain amplifiers.

Features

  • Low current gain
  • Low collector-emitter breakdown voltage
  • Low noise
  • Pb-free and RoHs-compliant

Applications

  • For low noise, high-gain amplifiers up to 2 GHz
  • For linear broadband amplifiers
Technical specifications
Ausführung NPN
Gehäuse SOT-143
max. Temperatur 150 °C
max.Spannung zwischen Kollektor und Basis Vcbo 20 V
max.Spannung zwischen Kollektor und Emitter Vceo 12 V
min. Temperatur -55 °C
Montage SMD
Transitfrequenz fTmin 6 GHz
Verlustleistung VA (AC) 0.58 W
Kollektorstrom 80 mA
Max Gleichstromverstärkung 140 mA
Min Gleichstromverstärkung 70 mA
Logistics
Ursprungsland MY
Zolltarifnummer 85412900
Compliance
RoHS konform No
Stand der RoHS-Richtlinie 3/31/15
SVHC frei Yes