BFP540FESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 80 mA, 4.5 V, SMD, TSFP-4, BFP540FESDH6327XTSA1
Unit Price (€ / pc.)
0.4165 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP540FESDH6327XTSA1, Infineon Technologies
Features
- Low current gain
- Low collector-emitter breakdown voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For ESD protected high gain low noise amplifiers
Technical specifications
| Version | NPN | |
| Enclosure | TSFP-4 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 10 V | |
| max.voltage between collector and emitter Vceo | 4.5 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Transit frequency fTmin | 30 GHz | |
| Power dissipation | 0.25 W | |
| Collector current | 80 mA | |
| Max DC amplification | 170 mA | |
| Min DC gain | 50 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
