BFP650FH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 150 mA, 4 V, SMD, TSFP-4, BFP650FH6327XTSA1
Unit Price (€ / pc.)
0.3927 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP650FH6327XTSA1, Infineon Technologies
Features
- Low current gain
- Low collector-emitter breakdown voltage
- 70 GHz fT- Silicon Germanium
- Pb-free and RoHs-compliant
Applications
- For low phase noise oscilators
- For medium power amplifiers and driver stages
Technical specifications
| Version | NPN | |
| Enclosure | TSFP-4 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 13 V | |
| max.voltage between collector and emitter Vceo | 4 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Transit frequency fTmin | 42 GHz | |
| Power dissipation | 0.5 W | |
| Collector current | 150 mA | |
| Max DC amplification | 270 mA | |
| Min DC gain | 110 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1 piece |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
