BFP720FH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 25 mA, 4 V, SMD, TSFP-4, BFP720FH6327XTSA1
Unit Price (€ / pc.)
0.3689 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP720FH6327XTSA1, Infineon Technologies
The BFP720FH6327XTSA1 is a wideband NPN RF heterojunction bipolar transistor (HBT).
Features
- High performance general purpose wideband LNA transistor
- Low collector-emitter breakdown voltage
- Low current gain
- Pb-free and RoHs-compliant
Applications
- FM radio
- Satellite radio
- Cordless phone
- Bluetooth
Technical specifications
| Ausführung | NPN | |
| Gehäuse | TSFP-4 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 13 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 4 V | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Transitfrequenz fTmin | 45 GHz | |
| Verlustleistung VA (AC) | 0.1 W | |
| Kollektorstrom | 25 mA | |
| Max Gleichstromverstärkung | 400 mA | |
| Min Gleichstromverstärkung | 160 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
