BFP740ESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 45 mA, 4.2 V, SMD, SOT-343, BFP740ESDH6327XTSA1
Unit Price (€ / pc.)
0.3689 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP740ESDH6327XTSA1, Infineon Technologies
The BFP740ESDH6327XTSA1 is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection.
Features
- Unique combination of high end RF performance and robustness
- High gain
- Integrated protection circuit
Applications
- Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB
- Wireless communications: WLAN, WiMax and UWB
- Multimedia applications such as portable TV, CATV and FM radio
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-343 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 4.9 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 4.2 V | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Transitfrequenz fTmin | 45 GHz | |
| Verlustleistung VA (AC) | 0.16 W | |
| Kollektorstrom | 45 mA | |
| Max Gleichstromverstärkung | 400 mA | |
| Min Gleichstromverstärkung | 160 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
