BFP740FESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 45 mA, 4.2 V, SMD, TSFP-4, BFP740FESDH6327XTSA1
Unit Price (€ / pc.)
0.357 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP740FESDH6327XTSA1, Infineon Technologies
The BFP740FESDH6327XTSA1 is a very low noise wideband NPN bipolar RF transistor. The device is based on a reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology.
Features
- High RF input power
- High ESD protection
- Low noise
- Pb-free and RoHs-compliant
Applications
- As low noise amplifier (LNA) in mobile, portable and fixed connectivity applications.
- As discrete active mixer, amplifier in VCOs and buffer amplifier
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- Satellite communication systems navigation systems, satellite radio and C-band LNB
Technical specifications
| Ausführung | NPN | |
| Gehäuse | TSFP-4 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 4.9 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 4.2 V | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Transitfrequenz fTmin | 47 GHz | |
| Verlustleistung VA (AC) | 0.16 W | |
| Kollektorstrom | 45 mA | |
| Max Gleichstromverstärkung | 400 mA | |
| Min Gleichstromverstärkung | 160 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
