BFP840ESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 35 mA, 2.25 V, SMD, SOT-343, BFP840ESDH6327XTSA1
Unit Price (€ / pc.)
0.3332 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP840ESDH6327XTSA1, Infineon Technologies
The BFP840ESDH6327XTSA1 is a high performance HBT (heterojunction bipolar transistor) specifically designed for 5-6 GHz Wi-Fi applications. The device is based on a reliable high volume SiGe:C technology.
Features
- High gain
- High ESD protection
- Low noise
- Pb-free and RoHs-compliant
Applications
- As low noise amplifier (LNA) in mobile, portable and fixed connectivity applications.
- Ideal for low voltage applications
- Ka-band oscillators
- Satellite communication systems navigation systems, satellite radio and C-band LNB
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-343 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 2.9 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 2.25 V | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Transitfrequenz fTmin | 80 GHz | |
| Verlustleistung VA (AC) | 0.075 W | |
| Kollektorstrom | 35 mA | |
| Max Gleichstromverstärkung | 450 mA | |
| Min Gleichstromverstärkung | 150 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
