BFP842ESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 40 mA, 3.25 V, SMD, SOT-343, BFP842ESDH6327XTSA1
Unit Price (€ / pc.)
0.3332 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP842ESDH6327XTSA1, Infineon Technologies
The BFP842ESDH6327XTSA1 is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.
Features
- Unique combination of high end RF performance and robustness
- Integrated protection circuits
- High RF gain
- High transition frequency
Applications
- Wireless communications: WLAN, WiMAX and Bluetooth
- Satellite communication systems: GNSS navigation systems, satellite radio and C-band LNB
- Multimedia applications such as mobile/portable TV, mobile TV and FM radio
- ISM applications like RKE, AMR and Zigbee
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-343 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 4.1 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 3.25 V | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Transitfrequenz fTmin | 57 GHz | |
| Verlustleistung VA (AC) | 0.12 W | |
| Kollektorstrom | 40 mA | |
| Max Gleichstromverstärkung | 450 mA | |
| Min Gleichstromverstärkung | 150 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
