BFP843FH6327XTSA1 | Infineon Technologies

Bipolar junction transistor, NPN, 55 mA, 2.25 V, SMD, TSFP-4, BFP843FH6327XTSA1

Order No.: 88S7124
EAN: 4099879031808
MPN:
BFP843FH6327XTSA1
SP001062606
Series: BFP
Infineon Technologies
BFP843FH6327XTSA1 Infineon Technologies Bipolar Transistors
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Unit Price (€ / pc.)
0.3213 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
0.32 € *
*incl. VAT plus shipping costs
**Subject to prior sale
3000 pcs.
0.3213 €

Bipolar transistor, BFP843FH6327XTSA1, Infineon Technologies

The BFP843FH6327XTSA1 is a very low noise wideband NPN bipolar RF transistor. The device is based on a reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology.

Features

  • High gain
  • High ESD robustness
  • Low noise
  • Low power consumption

Applications

  • As low noise amplifier (LNA) in wireless communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
  • Satellite navigation systems and satellite C-band LNB
  • Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
  • Dedicated short range communication (DSRC) systems: WLAN EEE802.11p
Technical specifications
Version NPN
Enclosure TSFP-4
max. operating temperature 150 °C
max.voltage between collector and base Vcbo 2.9 V
max.voltage between collector and emitter Vceo 2.25 V
min. operating temperature -55 °C
Assembly SMD
Transit frequency fTmin 1 GHz
Power dissipation 0.125 W
Collector current 55 mA
Max DC amplification 450 mA
Min DC gain 150 mA
Logistics
Customs tariff number 85412900
Original Packaging Reel with 3,000 pieces
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes