BFP843FH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 55 mA, 2.25 V, SMD, TSFP-4, BFP843FH6327XTSA1
Unit Price (€ / pc.)
0.3213 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP843FH6327XTSA1, Infineon Technologies
The BFP843FH6327XTSA1 is a very low noise wideband NPN bipolar RF transistor. The device is based on a reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology.
Features
- High gain
- High ESD robustness
- Low noise
- Low power consumption
Applications
- As low noise amplifier (LNA) in wireless communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
- Satellite navigation systems and satellite C-band LNB
- Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
- Dedicated short range communication (DSRC) systems: WLAN EEE802.11p
Technical specifications
| Ausführung | NPN | |
| Gehäuse | TSFP-4 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 2.9 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 2.25 V | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Transitfrequenz fTmin | 1 GHz | |
| Verlustleistung VA (AC) | 0.125 W | |
| Kollektorstrom | 55 mA | |
| Max Gleichstromverstärkung | 450 mA | |
| Min Gleichstromverstärkung | 150 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
