BFR106E6327 | Infineon Technologies

Bipolar junction transistor, NPN, 210 mA, 16 V, SMD, SOT-23, BFR106E6327

Order No.: 16S9780
EAN: 4099879029003
MPN:
BFR106E6327
Series: BFR
Infineon Technologies
BFR106E6327 Infineon Technologies Bipolar Transistors
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Unit Price (€ / pc.)
0.2178 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
0.22 € *
*incl. VAT plus shipping costs
**Subject to prior sale
3000 pcs.
0.2178 €

Bipolar transistor, BFR106E6327, Infineon Technologies

The BFR106E6327 is a low noise silicon bipolar RF transistor that is used for UHF/VHF applications.

Features

  • Low current gain
  • High collector-emitter breakdown voltage
  • Low noise
  • Pb-free and RoHs-compliant

Applications

  • For UHF / VHF applications
  • For linear broadband and antenna amplifiers
Technical specifications
Version NPN
Enclosure SOT-23
max. operating temperature 150 °C
max.voltage between collector and base Vcbo 20 V
max.voltage between collector and emitter Vceo 16 V
min. operating temperature -55 °C
Assembly SMD
Transit frequency fTmin 5 GHz
Power dissipation 0.7 W
Collector current 210 mA
Max DC amplification 140 mA
Min DC gain 70 mA
Logistics
Country of origin CN
Customs tariff number 85412900
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes