BFR106E6327 | Infineon Technologies
Bipolar junction transistor, NPN, 210 mA, 16 V, SMD, SOT-23, BFR106E6327
Unit Price (€ / pc.)
0.2178 € *
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Bipolar transistor, BFR106E6327, Infineon Technologies
The BFR106E6327 is a low noise silicon bipolar RF transistor that is used for UHF/VHF applications.
Features
- Low current gain
- High collector-emitter breakdown voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For UHF / VHF applications
- For linear broadband and antenna amplifiers
Technical specifications
Ausführung | NPN | |
Gehäuse | SOT-23 | |
max. Temperatur | 150 °C | |
max.Spannung zwischen Kollektor und Basis Vcbo | 20 V | |
max.Spannung zwischen Kollektor und Emitter Vceo | 16 V | |
min. Temperatur | -55 °C | |
Montage | SMD | |
Transitfrequenz fTmin | 5 GHz | |
Verlustleistung VA (AC) | 0.7 W | |
Kollektorstrom | 210 mA | |
Max Gleichstromverstärkung | 140 mA | |
Min Gleichstromverstärkung | 70 mA |
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Logistics
Ursprungsland | CN |
Zolltarifnummer | 85412900 |
Compliance
RoHS konform | Yes |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |