BFR106E6327 | Infineon Technologies

Name: Bipolar junction transistor, NPN, 210 mA, 16 V, SMD, SOT-23, BFR106E6327
Brand: Infineon Technologies
SKU: 16S9780
Price: 0.22 EUR
Availability: OutOfStock

Bipolar junction transistor, NPN, 210 mA, 16 V, SMD, SOT-23, BFR106E6327

Order No.: 16S9780

EAN: 4099879029003

MPN:

BFR106E6327

Series: BFR

Image may differ

Key Specification:

Montage SMD

Gehäuse SOT-23

Ausführung NPN

Kollektorstrom 210 mA

Show 3 variants

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.2178 € *

Available: 0 pcs.

Leadtime: On Request **

Total Price:

653.31 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

Bipolar transistor, BFR106E6327, Infineon Technologies

The BFR106E6327 is a low noise silicon bipolar RF transistor that is used for UHF/VHF applications.

Features

Low current gain
High collector-emitter breakdown voltage
Low noise
Pb-free and RoHs-compliant

Applications

For UHF / VHF applications
For linear broadband and antenna amplifiers

Technical specifications

	Ausführung	NPN
	Gehäuse	SOT-23
	max. Temperatur	150 °C
	max.Spannung zwischen Kollektor und Basis Vcbo	20 V
	max.Spannung zwischen Kollektor und Emitter Vceo	16 V
	min. Temperatur	-55 °C
	Montage	SMD
	Transitfrequenz fTmin	5 GHz
	Verlustleistung VA (AC)	0.7 W
	Kollektorstrom	210 mA
	Max Gleichstromverstärkung	140 mA
	Min Gleichstromverstärkung	70 mA