BFR183E6327 | Infineon Technologies
Bipolar junction transistor, NPN, 65 mA, 12 V, SMD, SOT-23, BFR183E6327
Unit Price (€ / pc.)
0.1809 € *
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Bipolar transistor, BFR183E6327, Infineon Technologies
The BFR183E6327 is a low noise silicon bipolar RF transistor that is used for high-gain broadband amplifiers.
Features
- Low current gain
- High collector-emitter breakdown voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For low noise applications
- For high gain broadbans amplifiers
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-23 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 20 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 12 V | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Transitfrequenz fTmin | 8 GHz | |
| Verlustleistung VA (AC) | 0.45 W | |
| Kollektorstrom | 65 mA | |
| Max Gleichstromverstärkung | 140 mA | |
| Min Gleichstromverstärkung | 70 mA |
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Logistics
| Ursprungsland | MY |
| Zolltarifnummer | 85412900 |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
