BFR93AWH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 90 mA, 12 V, SMD, SOT-323, BFR93AWH6327XTSA1
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Bipolar transistor, BFR93AWH6327XTSA1, Infineon Technologies
The BFR93AWH6327XTSA1 is a low noise silicon bipolar RF transistor that is used for low distortion amplifiers.
Features
- Low current gain
- High collector-emitter breakdown voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For low distortion broadband amplifiers
- For oscilators
Technical specifications
| Version | NPN | |
| Enclosure | SOT-323 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 20 V | |
| max.voltage between collector and emitter Vceo | 12 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Transit frequency fTmin | 4.5 GHz | |
| Power dissipation | 0.3 W | |
| Collector current | 90 mA | |
| Max DC amplification | 140 mA | |
| Min DC gain | 70 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 72,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
