BSC016N03LSGATMA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 100 A, PG-TDSON-8, BSC016N03LSGATMA1
Unit Price (€ / pc.)
0.9282 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, BSC016N03LSGATMA1, Infineon Technologies
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- N-channel
- Very low on-resistance
Applications
- Onboard charger
- Notebook
- Mainboard
- DC-DC
- VRD/VRM
- Motor control
- LED
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 1.6 mΩ | |
| Gate Charge Qg @10V (nC) | 4.7x10<sup>-8</sup> C | |
| Enclosure | PG-TDSON-8 | |
| max. Voltage | 30 V | |
| Max. current | 100 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 125 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1 piece |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
