BSC016N03LSGATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 100 A, PG-TDSON-8, BSC016N03LSGATMA1
Brand: Infineon Technologies
SKU: 88S7263
Price: 0.93 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 100 A, PG-TDSON-8, BSC016N03LSGATMA1

Order No.: 88S7263

EAN: 4099879034922

MPN:

BSC016N03LSGATMA1

SP000237663

Series: BSC

BSC016N03LSGATMA1 Infineon Technologies MOSFETs Image 1

BSC016N03LSGATMA1 Infineon Technologies MOSFETs Image 2

Image may differ

Key Specification:

Ausführung N-Kanal

max. Spannung 30 V

max. Strom 100 A

Einschaltwiderstand RDS (on) max @VGS=10V 1.6 mΩ

Ordering Information:

NCNR-Produkt ist nicht stornierbar/retournierbar

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.9282 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.93 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, BSC016N03LSGATMA1, Infineon Technologies

Features

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
N-channel
Very low on-resistance

Applications

Onboard charger
Notebook
Mainboard
DC-DC
VRD/VRM
Motor control
LED

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	1.6 mΩ
	Gate Charge Qg @10V (nC)	4.7x10<sup>-8</sup> C
	Gehäuse	PG-TDSON-8
	max. Spannung	30 V
	max. Strom	100 A
	max. Temperatur	150 °C
	min. Temperatur	-55 °C
	Montage	SMD
	Verlustleistung W (DC)	125 W