BSC018N04LSGATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS3 power transistor, 40 V, 30 A, PG-TDSON-8, BSC018N04LSGATMA1
Brand: Infineon Technologies
SKU: 88S7269
Price: 0.83 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS3 power transistor, 40 V, 30 A, PG-TDSON-8, BSC018N04LSGATMA1

Order No.: 88S7269

EAN: 4099879034939

MPN:

BSC018N04LSGATMA1

SP000388293

Series: BSC

BSC018N04LSGATMA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version N channel

max. Voltage 40 V

Max. current 30 A

drain-source on resistance RDS (on) max @VGS=10V 1.8 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.833 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.83 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, BSC018N04LSGATMA1, Infineon Technologies

Features

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
N-channel
Very low on-resistance

Applications

Synchronous rectification
Isolated DC-DC converters
Motor control
Or-ing switches

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	1.8 mΩ
	Gate Charge Qg @10V (nC)	5.4x10<sup>-8</sup> C
	Enclosure	PG-TDSON-8
	max. Voltage	40 V
	Max. current	30 A
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	125 W