BSC120N03MSGATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS3 M series power MOSFET, 30 V, 11 A, PG-TDSON-8, BSC120N03MSGATMA1
Brand: Infineon Technologies
SKU: 88S7332
Price: 0.63 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS3 M series power MOSFET, 30 V, 11 A, PG-TDSON-8, BSC120N03MSGATMA1

Order No.: 88S7332

EAN: 4099879034953

MPN:

BSC120N03MSGATMA1

SP000311516

Series: BSC

BSC120N03MSGATMA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version N channel

max. Voltage 30 V

Max. current 11 A

drain-source on resistance RDS (on) max @VGS=10V 12 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.6307 € *

Available: 0 pcs.

Leadtime: On Request **

Add to Cart

Total Price:

0.63 € *

Price list

Quantity

Price per unit*

10 pcs.

0.6307 €

50 pcs.

0.5236 €

250 pcs.

0.4641 €

1000 pcs.

0.4165 €

2000 pcs.

0.3689 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, BSC120N03MSGATMA1, Infineon Technologies

Features

Optimized for 5V driver application
Low FOM for high frequency SMPS
N-channel
Very low on-resistance

Applications

Onboard charger
Notebook
Mainboard
DC-DC
VRD/VRM
Motor control
LED

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	12 mΩ
	Gate Charge Qg @10V (nC)	1.5x10<sup>-8</sup> C
	Enclosure	PG-TDSON-8
	max. Voltage	30 V
	Max. current	11 A
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD