BSC886N03LSGATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 13 A, TDSON-8, BSC886N03LSGATMA1
Brand: Infineon Technologies
SKU: 88S7361
Price: 0.37 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 13 A, TDSON-8, BSC886N03LSGATMA1

Order No.: 88S7361

EAN: 4099879034960

MPN:

BSC886N03LSGATMA1

SP000475950

Series: BSC

BSC886N03LSGATMA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version N channel

max. Voltage 30 V

Max. current 13 A

drain-source on resistance RDS (on) max @VGS=10V 6 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.3689 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.37 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, BSC886N03LSGATMA1, Infineon Technologies

Features

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
N-channel
Very low on-resistance

Applications

Onboard charger
Notebook
Mainboard
DC-DC
VRD/VRM
Motor control
LED

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	6 mΩ
	Gate Charge Qg @10V (nC)	1.2x10<sup>-8</sup> C
	Enclosure	TDSON-8
	max. Voltage	30 V
	Max. current	13 A
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD