BSL308CH6327XTSA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS P3 + Optimos 2 small signal transistor, 30 V, -2 A, PG-TSOP6, BSL308CH6327XTSA1
Unit Price (€ / pc.)
0.3332 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, BSL308CH6327XTSA1, Infineon Technologies
Features
- Complementary P + N channel
- Enhancement mode
- Logic level
- Avalanche rated
Applications
- Automotive
- DC-DC
- Motor control
- On-board charger
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 80 mΩ | |
drain-source on resistance RDS (on) max @VGS=4,5V | 130 mΩ | |
Gate Charge Qg @10V (nC) | 1.5x10<sup>-9</sup> C | |
Enclosure | PG-TSOP6 | |
max. Voltage | 30 V | |
Max. current | -2 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD | |
Power loss | 0.5 W |
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Logistics
Customs tariff number | 85412900 |
Original Packaging | Reel with 3,000 pieces |