BSO615CGHUMA1 | Infineon Technologies
Infineon Technologies N/P-channel SIPMOS small signal transistor, 60 V, 3.1 A, SOIC-8, BSO615CGHUMA1
Unit Price (€ / pc.)
1.1543 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
1.15 € *
Price list
Quantity
Price per unit*
1 pcs.
1.1543 €
25 pcs.
0.9401 €
100 pcs.
0.7854 €
250 pcs.
0.6783 €
1000 pcs.
0.6069 €
*incl. VAT plus shipping costs
**Subject to prior sale
Dual MOSFET, BSO615CGHUMA1, Infineon Technologies
The BSO615C G is a SIPMOS® dual N/P-channel enhancement-mode Small Signal Transistor for DC-to-DC converter and on-board charger applications. It is a complementary MOSFET with n-channel and a p-channel power transistor within the same package.
Features
- Avalanche rated
- Logic level
Technical specifications
| Ausführung | N/P-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 110 mΩ | |
| Gate Charge Qg @10V (nC) | 1.7x10<sup>-9</sup> C | |
| Gehäuse | SOIC-8 | |
| max. Spannung | 60 V | |
| max. Strom | 3.1 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 2 W |
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Logistics
| Ursprungsland | ID |
| Zolltarifnummer | 85412900 |
| MSL | MSL 3 |
| Originalverpackung | Rolle mit 2.500 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
