BSP372NH6327XTSA1 | Infineon Technologies

Name: Infineon Technologies N channel SIPMOS small signal transistor, 100 V, 1.8 A, SOT-223, BSP372NH6327XTSA1
Brand: Infineon Technologies
SKU: 17S7642
Price: 0.42 EUR
Availability: OutOfStock

Infineon Technologies N channel SIPMOS small signal transistor, 100 V, 1.8 A, SOT-223, BSP372NH6327XTSA1

Order No.: 17S7642

EAN: 4099879032935

MPN:

BSP372NH6327XTSA1

Series: BSP37

BSP372NH6327XTSA1 Infineon Technologies MOSFETs Image 2

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Key Specification:

Ausführung N-Kanal

max. Spannung 100 V

max. Strom 1.8 A

Einschaltwiderstand RDS (on) max @VGS=10V 230 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.4165 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.42 € *

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**Subject to prior sale

Description

MOSFET, BSP372NH6327XTSA1, Infineon Technologies

Features

N-channel
Enhancement mode
Logic level
Avalanche rated

Applications

Automotive
Consumer
DC-DC
eMobility
Motor control
Onboard charger
Telecom

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	230 mΩ
	Gate Charge Qg @10V (nC)	9.5x10<sup>-9</sup> C
	Gehäuse	SOT-223
	max. Spannung	100 V
	max. Strom	1.8 A
	max. Temperatur	150 °C
	min. Temperatur	-55 °C
	Montage	SMD
	Verlustleistung W (DC)	1.8 W