BSP372NH6327XTSA1 | Infineon Technologies
Infineon Technologies N channel SIPMOS small signal transistor, 100 V, 1.8 A, SOT-223, BSP372NH6327XTSA1
Unit Price (€ / pc.)
0.4165 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, BSP372NH6327XTSA1, Infineon Technologies
Features
- N-channel
- Enhancement mode
- Logic level
- Avalanche rated
Applications
- Automotive
- Consumer
- DC-DC
- eMobility
- Motor control
- Onboard charger
- Telecom
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 230 mΩ | |
Gate Charge Qg @10V (nC) | 9.5x10<sup>-9</sup> C | |
Enclosure | SOT-223 | |
max. Voltage | 100 V | |
Max. current | 1.8 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD | |
Power loss | 1.8 W |
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Logistics
Country of origin | MY |
Customs tariff number | 85412900 |
Original Packaging | Reel with 1 piece |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |