BSP613PH6327XTSA1 | Infineon Technologies
Infineon Technologies P-channel SIPMOS small signal transistor, -60 V, -2.9 A, PG-SOT223, BSP613PH6327XTSA1
Unit Price (€ / pc.)
2.8203 € *
Available: 11 pcs.
Leadtime: On Request **
Total Price:
2.82 € *
Price list
Quantity
Price per unit*
1 pcs.
2.8203 €
10 pcs.
1.7612 €
50 pcs.
1.5470 €
250 pcs.
1.3447 €
1000 pcs.
1.1781 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, BSP613PH6327XTSA1, Infineon Technologies
Features
- P-Channel
- Enhancement mode
- dv/dt rated
- Avalanche rated
Applications
- Power management functions
- Motor control
- On-board charger
- DC-DC
- Consumer
- Logic level translators
- Power MOSFET gate drivers
Technical specifications
| Ausführung | P-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 130 mΩ | |
| Gate Charge Qg @10V (nC) | 2.2x10<sup>-8</sup> C | |
| Gehäuse | PG-SOT223 | |
| max. Spannung | -60 V | |
| max. Strom | -2.9 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 1.8 W |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 1 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
